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micron MT25QL01GBBB1EW9-0SIT TR
| Manufacturer | |
| MPN | MT25QL01GBBB1EW9-0SIT TR |
| LCSC Part # | C1352016 |
| Packaging | W-PDFN-8-EP(6x8) |
| Customer # | |
| Key Attributes | 1Gbit 2.7V~3.6V 133MHz SPI W-PDFN-8-EP(6x8) Memory RoHS |
| Datasheet | micron MT25QL01GBBB1EW9-0SIT TR |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | W-PDFN-8-EP(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware write protection;Software write protection | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | W-PDFN-8-EP(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware write protection;Software write protection | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
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Features
AI Translation
- Stacked device (two 512Mb die)
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols: Extended, Dual and Quad I/O both STR and DTR
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Additional reset pin for selected part numbers
- 3-byte and 4-byte address modes – enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory – Readable and user-lockable
- Erase capability – Die Erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
- Erase performance: 400KB/sec (64KB sector)
- Erase performance: 80KB/sec (4KB sub-sector)
- Program performance: 2MB/sec
- Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
- Electronic signature – JEDEC-standard 3-byte signature (BA21h) – Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 19.0847 | $ 19.08 |
| 30+ | $ 18.1469 | $ 544.41 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | W-PDFN-8-EP(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware write protection;Software write protection | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | W-PDFN-8-EP(6x8) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware write protection;Software write protection | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Stacked device (two 512Mb die)
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols: Extended, Dual and Quad I/O both STR and DTR
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Additional reset pin for selected part numbers
- 3-byte and 4-byte address modes – enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory – Readable and user-lockable
- Erase capability – Die Erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
- Erase performance: 400KB/sec (64KB sector)
- Erase performance: 80KB/sec (4KB sub-sector)
- Program performance: 2MB/sec
- Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
- Electronic signature – JEDEC-standard 3-byte signature (BA21h) – Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
C1352016 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| W25Q01JVZEIQ | Winbond | WSON-8-EP(8x6) | 422 | $ 36.6276 | ||
| MT25QL01GBBB1EW9-0SIT | micron | WPDFN-8(6x8) | 0 | $ 15.123 | ||
| W25Q01JVZEIM TR | Winbond | WSON-8(6x8) | 0 | $ 23.9851 | ||
| W25Q01JVZEIQ TR | Winbond | WSON-8(6x8) | 0 | $ 69.2135 | ||
| IS25LP01GG-RHLE | ISSI | WSON-8(6x8) | 0 | $ 17.744 | ||
| IS25LP01GG-RHLE-TR | ISSI | WSON-8(6x8) | 0 | $ 20.7549 | ||
| IS25LP01GG-RMLE-TR | ISSI | WSON-8(6x8) | 0 | $ 18.0487 | ||
| IS25LP01GG-RMLE-TY | ISSI | WSON-8(6x8) | 0 | $ 23.5182 |