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TI CSD19536KTT

Manufacturer
TI
MPN
CSD19536KTT
LCSC Part #
C2687963
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 100V 200A TO-263-3
DatasheetTI CSD19536KTT
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-263-3
Output Capacitance(Coss)2.37nF
Ciss-Input Capacitance12nF
Pd - Power Dissipation375W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)200A
Reverse Transfer Capacitance (Crss)61pF
RDS(on)2.2mΩ@6V
Number1 N-channel
Gate Charge(Qg)153nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.2V
TypeN-Channel
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Introduction

AI Translation

This 100 V, 2 mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche-rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen-free
  • D2PAK plastic package

Applications

AI Translation
  • Secondary-side synchronous rectifier
  • Hot swap
  • Motor control