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Infineon IRF7105TRPBF
| Manufacturer | |
| MPN | IRF7105TRPBF |
| LCSC Part # | C94064 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 25V 3.5A SO-8 |
| Datasheet | Infineon IRF7105TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Reverse Transfer Capacitance (Crss) | 61pF;67pF | |
| RDS(on) | 100mΩ@10V;250mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Ciss-Input Capacitance | 330pF;290pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 27nC@10V;25nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 250pF;210pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Reverse Transfer Capacitance (Crss) | 61pF;67pF | |
| RDS(on) | 100mΩ@10V;250mΩ@4.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 330pF;290pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 27nC@10V;25nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 250pF;210pF |
Introduction
The fifth-generation HEXFET employs advanced process technology to achieve the lowest possible on-resistance per unit silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient device suitable for a wide range of applications. The SO-8 package has been enhanced with a custom lead frame to improve thermal characteristics and multi-chip capability, making it well suited for various power applications. These improvements enable significant PCB space savings when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques. In typical PCB-mounted applications, power dissipation can exceed 0.8W.
Features
- Advanced process technology
- Ultra-low on-resistance
- Dual N-channel and P-channel MOSFET
- Surface mount
- Tape and reel packaging available
- Dynamic dv/dt rating
- Fast switching
- Lead-free
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Reverse Transfer Capacitance (Crss) | 61pF;67pF | |
| RDS(on) | 100mΩ@10V;250mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Ciss-Input Capacitance | 330pF;290pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 27nC@10V;25nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 250pF;210pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Reverse Transfer Capacitance (Crss) | 61pF;67pF | |
| RDS(on) | 100mΩ@10V;250mΩ@4.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 330pF;290pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 27nC@10V;25nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 250pF;210pF |
Introduction
The fifth-generation HEXFET employs advanced process technology to achieve the lowest possible on-resistance per unit silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an extremely efficient device suitable for a wide range of applications. The SO-8 package has been enhanced with a custom lead frame to improve thermal characteristics and multi-chip capability, making it well suited for various power applications. These improvements enable significant PCB space savings when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques. In typical PCB-mounted applications, power dissipation can exceed 0.8W.
Features
- Advanced process technology
- Ultra-low on-resistance
- Dual N-channel and P-channel MOSFET
- Surface mount
- Tape and reel packaging available
- Dynamic dv/dt rating
- Fast switching
- Lead-free
C94064 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |