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BL BL24C256A-PARC

Manufacturer
BLAsian Brands
MPN
BL24C256A-PARC
LCSC Part #
C90485
Packaging
SOP-8
Customer #
Key Attributes
256Kbits EEPROM with I2C Protocol and Hardware Write Protection
DatasheetBL BL24C256A-PARC
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerBL
PackagingSOP-8
Operating Temperature-40℃~+85℃
FeaturesHardware write protection function;Noise suppression function
Memory Size256Kbit
Voltage - Supply1.7V~5.5V;0.28mA
Clock Frequency1MHz
Access Time0.55us
Data Retention - TDR (Year)100 years
Write Cycle Time(tWC)3ms
Standby Supply Current0.5uA
Write Cycle Endurance1,000,000 cycles
InterfaceI2C

Introduction

AI Translation

The BL24C256A provides 262144 bits of serial electrically erasable and programmable readonly memory (EEPROM), organized as 32768 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The BL24C256A offers an additional page, named the Identification Page (64 bytes). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode.

Features

AI Translation
  • Compatible with all I2C bidirectional data transfer protocol
  • Memory array: 256 Kbits (32 Kbytes) of EEPROM
  • Page size: 64 bytes
  • Additional Write lockable page
  • Single supply voltage and high speed
  • 1 MHz Random and sequential Read modes
  • Byte Write within 3 ms
  • Page Write within 3 ms
  • Partial Page Writes Allowed
  • Write Protect Pin for Hardware Data Protection
  • Schmitt Trigger, Filtered Inputs for Noise Suppression
  • High-reliability
  • Endurance: 1 Million Write Cycles
  • Data Retention: 100 Years
  • Enhanced ESD/Latch-up protection
  • HBM 8000V
  • 8-lead PDIP/SOP/TSSOP/UDFN packages

Applications

AI Translation
  • Industrial and commercial applications, especially where low-power and low-voltage operation are critical.
  • Applications requiring serial EEPROM storage for potentially sensitive application parameters.