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TI CSD87333Q3DRoHS

Manufacturer
TI
MPN
CSD87333Q3D
LCSC Part #
C90396
Packaging
VSON-8(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH ARR 30V 15A VSON-8(3.3x3.3)
Datasheetpdf iconTI CSD87333Q3D
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.5325$ 1.53
10+$ 1.2947$ 12.95
30+$ 1.1661$ 34.98
100+$ 1.0179$ 101.79
500+$ 0.8876$ 443.80
1,000+$ 0.8583$ 858.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTI
PackagingVSON-8(3.3x3.3)
Current - Continuous Drain(Id)15A
Pd - Power Dissipation6W
RDS(on)13.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)10.7pF
Number2 N-Channel
Input Capacitance(Ciss)662pF
Gate Charge(Qg)4.6nC@4.5V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The CSD87333Q3D NexFET power block is an optimized design for synchronous buck and boost applications offering high-current, high-efficiency, and high-frequency capability in a small 3.3-mm×3.3-mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution in high-duty cycle applications when paired with an external controller or driver.

Features

AI Translation
  • Half-Bridge Power Block Optimized for High-Duty Cycle Up to 24 Vin
  • 94.7% System Efficiency at 8 A
  • 1.5 W PLoss at 8 A
  • Up to 15-A Operation
  • High-Frequency Operation (up to 1.5 MHz)
  • High-Density SON 3.3-mm×3.3-mm Footprint
  • Optimized for 5-V Gate Drive
  • Low-Switching Losses
  • Ultra-Low Inductance Package
  • RoHS Compliant
  • Halogen Free
  • Lead-Free Terminal Plating

Applications

AI Translation
  • Synchronous Buck Converters – High-Frequency Applications
  • High-Duty Cycle Applications
  • Synchronous Boost Converters
  • POL DC-DC Converters