LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
onsemi FDS89161 product image
Images for reference only

onsemi FDS89161

Manufacturer
onsemi
MPN
FDS89161
LCSC Part #
C903642
Packaging
SO-8
Customer #
Key Attributes
100V 2.7A 105mΩ@10V 1.6W 2 N-Channel SO-8 FET, MOSFET Arrays RoHS
Datasheetonsemi FDS89161
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSO-8
Reverse Transfer Capacitance (Crss)3pF
Ciss-Input Capacitance210pF
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)43pF
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.7A
RDS(on)105mΩ@10V
Pd - Power Dissipation1.6W
TypeN-Channel
Configuration-
Number2 N-Channel
Gate Charge(Qg)4.1nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized for on-resistance RDS(ON), switching performance, and durability.

Features

AI Translation
  • Shield Gate MOSFET technology
  • Maximum on-resistance rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
  • Maximum on-resistance rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
  • High-performance trench technology for ultra-low rDS(on)
  • Industry-standard SMT package with high power and high current handling capability
  • 100% UIL tested
  • RoHS compliant

Applications

AI Translation
  • Synchronous rectifier
  • Primary switch in bridge topology