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onsemi FDS8840NZ

Manufacturer
onsemi
MPN
FDS8840NZ
LCSC Part #
C903641
Packaging
SO-8
Customer #
Key Attributes
2.5W 40V 18.6A 4.5mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS
Datasheetonsemi FDS8840NZ
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Output Capacitance(Coss)650pF
Ciss-Input Capacitance7.535nF
Pd - Power Dissipation2.5W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage40V
Current - Continuous Drain(Id)18.6A
Reverse Transfer Capacitance (Crss)445pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Gate Charge(Qg)144nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel
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Introduction

AI Translation

FDS8840NZ is designed to minimize losses in power conversion applications. Combining advances in silicon technology and packaging, it achieves the lowest on-resistance rDS(on) while maintaining excellent switching performance.

Features

AI Translation
  • Maximum on-resistance rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A
  • Maximum on-resistance rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A
  • Typical HBM ESD protection rating of 6 kV
  • High-performance trench technology for ultra-low rDS(on) and fast switching
  • High power and current handling capability
  • Lead-free, halogen-free/BFR-free, RoHS compliant

Applications

AI Translation
  • Synchronous buck circuits for Vcore and server applications
  • Notebook battery packs
  • Load switches