LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
onsemi FDS86141 product image
  • FDS86141 thumbnail 1
  • FDS86141 thumbnail 2
  • FDS86141 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi FDS86141

Manufacturer
onsemi
MPN
FDS86141
LCSC Part #
C903639
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 100V 7A SO-8
Datasheetonsemi FDS86141
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Output Capacitance(Coss)186pF
Ciss-Input Capacitance934pF
Pd - Power Dissipation2.5W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)7A
Reverse Transfer Capacitance (Crss)8.6pF
RDS(on)23mΩ@10V
Number1 N-channel
Gate Charge(Qg)16.5nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

This N-channel MOSFET is manufactured using ON Semiconductor's advanced Power Trench® process, which is specially optimized to minimize on-resistance while maintaining superior switching performance.

Features

AI Translation
  • Maximum rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
  • Maximum rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
  • High-performance trench technology for ultra-low rDS(on)
  • 100% UIL tested
  • RoHS compliant

Applications

AI Translation
  • DC-DC Conversion