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onsemi FDD4141-F085
| Manufacturer | |
| MPN | FDD4141-F085 |
| LCSC Part # | C903570 |
| Packaging | TO-252-2 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 58A TO-252-2 |
| Datasheet | onsemi FDD4141-F085 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252-2 | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 2.085nF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 58A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 12.3mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252-2 | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 2.085nF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 58A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 12.3mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET is fabricated using proprietary PowerTrench technology, achieving low on-resistance rDS(on) and optimized breakdown voltage BVDSS capability, delivering superior performance advantages in applications. Switching performance is also optimized to reduce power dissipation losses in converter/inverter applications.
Features
AI Translation
- Maximum on-resistance rDS(on) = 12.3 mΩ at VGS = -10 V, ID = -12.7 A
- Maximum on-resistance rDS(on) = 18.0 mΩ at VGS = -4.5 V, ID = -10.4 A
- High-performance trench technology for ultra-low rDS(on)
- AEC Q101 qualified
- RoHS compliant
Applications
AI Translation
- Inverter
- Power Supply
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252-2 | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 2.085nF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 58A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 12.3mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252-2 | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 2.085nF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 58A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 12.3mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET is fabricated using proprietary PowerTrench technology, achieving low on-resistance rDS(on) and optimized breakdown voltage BVDSS capability, delivering superior performance advantages in applications. Switching performance is also optimized to reduce power dissipation losses in converter/inverter applications.
Features
AI Translation
- Maximum on-resistance rDS(on) = 12.3 mΩ at VGS = -10 V, ID = -12.7 A
- Maximum on-resistance rDS(on) = 18.0 mΩ at VGS = -4.5 V, ID = -10.4 A
- High-performance trench technology for ultra-low rDS(on)
- AEC Q101 qualified
- RoHS compliant
Applications
AI Translation
- Inverter
- Power Supply
C903570 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HSU4117 | HUASHUO | Similar | TO-252 | 470 | $ 0.2929 | ||
| DE016PG | DOINGTER | Similar | TO-252 | 275 | $ 0.4474 | ||
| STU417S | Existar | Similar | TO-252 | 475 | $ 0.2123 | ||
| AGM40P35D | AGMSEMI | Similar | TO-252 | 60 | $ 0.3596 | ||
| E040P013CL1 | Existar | Similar | TO-252 | 2,370 | $0.2226 $0.2782 |