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onsemi NVMFS6H836NLT1G

Manufacturer
MPN
NVMFS6H836NLT1G
LCSC Part #
C900474
Packaging
DFN-5(5.9x4.9)
Customer #
Key Attributes
89W 80V 77A 5.1mΩ@10V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS
Datasheetonsemi NVMFS6H836NLT1G
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDFN-5(5.9x4.9)
Output Capacitance(Coss)250pF
Ciss-Input Capacitance1.95nF
Pd - Power Dissipation89W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage80V
Current - Continuous Drain(Id)77A
Reverse Transfer Capacitance (Crss)11pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Gate Charge(Qg)16nC@4.5V
Vgs±20V
Gate Threshold Voltage (Vgs(th))2V
TypeN-Channel

Features

AI Translation
  • Compact 5x6 mm package for space-constrained designs
  • Low on-resistance RDS(on) for minimized conduction losses
  • Low gate charge QG and capacitance for minimized driving losses
  • NVMFS6H836NLWF – solderable flank option for optical inspection
  • AEC-Q101 qualified with PPAP documentation available
  • Lead-free, halide-free, and RoHS compliant