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EDA ModelsEasyEDA
onsemi NTTFS3A08PZTAG
| Manufacturer | |
| MPN | NTTFS3A08PZTAG |
| LCSC Part # | C900342 |
| Packaging | WDFN-8-EP(3.3x3.3) |
| Customer # | |
| Key Attributes | 20V 15A 2.3W 4.9mΩ@4.5V 1 P-Channel WDFN-8-EP(3.3x3.3) Single FETs, MOSFETs |
| Datasheet | onsemi NTTFS3A08PZTAG |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8-EP(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 5nF | |
| Pd - Power Dissipation | 2.3W | |
| RDS(on) | 4.9mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 56nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8-EP(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 5nF | |
| Pd - Power Dissipation | 2.3W | |
| RDS(on) | 4.9mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 56nC@4.5V |
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Introduction
AI Translation
These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary, high cell-density DMOS process specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low in-line power dissipation in very compact surface-mount packages.
Features
AI Translation
- Ultra-low on-resistance R<sub>DS(on)</sub> to minimize conduction losses
- µ8FL package, 3.3 x 3.3 x 0.8 mm, space-saving with excellent thermal performance
- JESD22-A114 compliant, ESD protection up to 5 kV
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applications
AI Translation
- Battery switch
- High-side load switch
- Optimized for power management applications in portable products such as media tablets, ultrabooks, and mobile phones
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5846 | $ 0.58 |
| 10+ | $ 0.4767 | $ 4.77 |
| 30+ | $ 0.4227 | $ 12.68 |
| 100+ | $ 0.3687 | $ 36.87 |
| 500+ | $ 0.3363 | $ 168.15 |
| 1,500+ | $ 0.3209 | $ 481.35 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8-EP(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 5nF | |
| Pd - Power Dissipation | 2.3W | |
| RDS(on) | 4.9mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 56nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8-EP(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 5nF | |
| Pd - Power Dissipation | 2.3W | |
| RDS(on) | 4.9mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 56nC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary, high cell-density DMOS process specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low in-line power dissipation in very compact surface-mount packages.
Features
AI Translation
- Ultra-low on-resistance R<sub>DS(on)</sub> to minimize conduction losses
- µ8FL package, 3.3 x 3.3 x 0.8 mm, space-saving with excellent thermal performance
- JESD22-A114 compliant, ESD protection up to 5 kV
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applications
AI Translation
- Battery switch
- High-side load switch
- Optimized for power management applications in portable products such as media tablets, ultrabooks, and mobile phones
C900342 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HSCE2631 | HUASHUO | Similar | DFN-8(3.3x3.3) | 2,299 | $ 0.6231 | ||
| SI7615ADN-T1-GE3 | VISHAY | Similar | PowerPAK1212-8 | 1,600 | $0.5740 $0.6042 | ||
| DMP3011SFVWQ-7 | DIODES | Similar | PowerDI3333-8 | 3 | $ 0.9704 | ||
| SIS415DNT-T1-GE3 | VISHAY | Similar | PowerPAK1212-8S | 54 | $ 1.281 | ||
| DMP3007SCG-13 | DIODES | Similar | V-DFN3333-8 | 25 | $ 2.0974 |