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onsemi H11G2VM
| Manufacturer | |
| MPN | H11G2VM |
| LCSC Part # | C899472 |
| Packaging | DIP-6 |
| Customer # | |
| Key Attributes | 850mV@50mA,16mA 80V 6V 1.3V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Datasheet | onsemi H11G2VM |
| RoHS Compliance | 4 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 500%;- | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 290mW | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | Darlington output structure |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V |
| Type | Description | |
|---|---|---|
| Current transfer ratio | 500%;- | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 290mW | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | Darlington output structure |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Features
AI Translation
- High BVCEO:
- 100 V Minimum for H11G1M
- 80 V Minimum for H11G2M
- High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
- Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- CMOS Logic Interface
- Telephone Ring Detector
- Low Input TTL Interface
- Power Supply Isolation
- Replace Pulse Transformer
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 500%;- | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 290mW | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | Darlington output structure |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | DIP-6 | |
| Fall time | - | |
| Rise time | - | |
| Output Current | - | |
| Vce Saturation(VCE(sat)) | 850mV@50mA,16mA | |
| Operating Temperature | -40℃~+100℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V |
| Type | Description | |
|---|---|---|
| Current transfer ratio | 500%;- | |
| Voltage - Forward(Vf) | 1.3V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 290mW | |
| Output Type | Darlington Transistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | Darlington output structure |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Features
AI Translation
- High BVCEO:
- 100 V Minimum for H11G1M
- 80 V Minimum for H11G2M
- High Sensitivity to Low Input Current (Minimum 500% CTR at IF = 1 mA)
- Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80℃)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- CMOS Logic Interface
- Telephone Ring Detector
- Low Input TTL Interface
- Power Supply Isolation
- Replace Pulse Transformer
C899472 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |