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onsemi NSBC143TDXV6T5G product image
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onsemi NSBC143TDXV6T5G

Manufacturer
onsemi
MPN
NSBC143TDXV6T5G
LCSC Part #
C896397
Packaging
SOT-563-6
Customer #
Key Attributes
50V 160 100mA 357mW NPN 2 NPN (Pre-Biased) SOT-563-6 Single, Pre-Biased Bipolar Transistors RoHS
Datasheetonsemi NSBC143TDXV6T5G
RoHS Compliance3 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufactureronsemi
PackagingSOT-563-6
Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain160
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor6.1kΩ
Resistor Ratio-
Pd - Power Dissipation357mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)-
Operating temperature-55℃~+150℃
typeNPN
Number2 NPN (Pre-Biased)
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Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.

Features

AI Translation
  • Automotive and other applications with unique sourcing and change control requirements, using S and NSV prefixes; AEC-Q101 qualified with PPAP capability
  • Simplified circuit design
  • Board space savings
  • Reduced component count
  • Lead-free, halogen-free/BFR-free, and RoHS compliant