- Pinout
- Footprint
onsemi NDT014
| Manufacturer | |
| MPN | NDT014 |
| LCSC Part # | C895067 |
| Packaging | SOT-223-4 |
| Customer # | |
| Key Attributes | 3W 60V 2.7A 180mΩ@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS |
| Datasheet | onsemi NDT014 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 155pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2.7A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 155pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 2.7A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
Power SOT N-channel enhancement-mode power MOSFETs are manufactured using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance and deliver superior switching performance. These devices are particularly suited for low-voltage applications such as DC motor control and DC/DC conversion, where fast switching, low in-line power dissipation, and ruggedness against transients are required.
Features
- 2.7A, 60V, R DS(ON) = 0.2Ω at VGS = 10V
- High-density cell design for ultra-low RDS(ON)
- High power and current handling capability in widely used SMT packages
Applications
- Switch-mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 155pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2.7A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 155pF | |
| Pd - Power Dissipation | 3W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 2.7A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
Power SOT N-channel enhancement-mode power MOSFETs are manufactured using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance and deliver superior switching performance. These devices are particularly suited for low-voltage applications such as DC motor control and DC/DC conversion, where fast switching, low in-line power dissipation, and ruggedness against transients are required.
Features
- 2.7A, 60V, R DS(ON) = 0.2Ω at VGS = 10V
- High-density cell design for ultra-low RDS(ON)
- High power and current handling capability in widely used SMT packages
Applications
- Switch-mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
C895067 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |