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onsemi UMC5NT2G

Manufacturer
MPN
UMC5NT2G
LCSC Part #
C894751
Packaging
SOT-353
Customer #
Key Attributes
150mW 1 NPN, 1 PNP Pre-Biased 100mA 50V SOT-353 Special Purpose RoHS
Datasheetonsemi UMC5NT2G
RoHS Compliance4 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Special Purpose
Manufactureronsemi
PackagingSOT-353
Current - Collector Cutoff100nA
Transition frequency(fT)-
Pd - Power Dissipation150mW
DC Current Gain-
Emitter-Base Voltage VEBO-
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Number1 NPN, 1 PNP Pre-Biased
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Introduction

AI Translation

Bias Resistor Transistors (BRTs) incorporate a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. These digital transistors are designed to replace discrete devices and their external resistor bias networks. BRTs eliminate these discrete components by integrating them into a single device. In the UMC2NT1G series, two complementary BRT devices are packaged in SOT-353, making them ideal for low-power SMT applications where board space is limited.

Features

AI Translation
  • Simplified circuit design
  • Reduced board space
  • Reduced component count
  • Available in 8 mm, 7-inch/3000-unit tape and reel packaging
  • AEC-Q101 qualified with available PPAP documentation
  • NSV prefix for automotive and other applications requiring unique source and controlled change requirements
  • Pb-free, halogen-free/BFR-free, RoHS compliant