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EDA ModelsEasyEDA
onsemi SMUN5112T1G
| Manufacturer | |
| MPN | SMUN5112T1G |
| LCSC Part # | C894388 |
| Packaging | SC-70 |
| Customer # | |
| Key Attributes | 50V 60 100mA 202mW PNP 1 PNP Pre-Biased SC-70 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | onsemi SMUN5112T1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
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Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- Lead-free, halogen-free/BFR-free, and RoHS compliant
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- Lead-free, halogen-free/BFR-free, and RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |