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onsemi LE25U20AFD-AH

Manufacturer
onsemi
MPN
LE25U20AFD-AH
LCSC Part #
C891355
Packaging
SOIC-8
Customer #
Key Attributes
Serial Flash Memory
Datasheetonsemi LE25U20AFD-AH
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
Manufactureronsemi
PackagingSOIC-8
Operating Temperature-40℃~+85℃
Features-
Memory Size2Mbit
Voltage - Supply2.3V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency30MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)250ms@(64KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)4ms
Standby Supply Current50uA
InterfaceSPI
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Introduction

AI Translation

The LE25U20AFD is a serial interface-compatible flash memory device with a 256K x 8-bit configuration. It uses a single 2.5 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25U20AFD is housed in an 8-pin ultra-miniature package. These features make this device ideally suited to storing program codes in applications such as portable information devices, which are required to have increasingly more compact dimensions. Moreover, by using the small sector erase function this product is also suitable for the parameter or the date storage usage with comparatively little rewriting times that becomes a capacity shortage in EEPROM.

Features

AI Translation
  • Read / write operations enabled by single 2.5 V power supply : 2.30 to 3.60 V supply voltage range
  • Operating frequency : 30 MHz
  • Temperature range : -40 to +85℃
  • Serial interface : SPI mode 0, mode 3 supported
  • Sector size : 4K bytes/small sector, 64K bytes/sector
  • Small sector erase, sector erase, chip erase functions
  • Page program function (256 bytes / page)
  • Block protect function
  • Status functions : Ready/busy information, protect information
  • Highly reliable read/write Number of rewrite times : 100,000 times Small sector erase time : 40 ms (typ), 150 ms (max) Sector erase time : 80 ms (typ), 250 ms (max) Chip erase time : 250 ms (typ), 1.6 s (max) Page program time : 4.0 ms / 256 bytes (typ), 5.0 ms / 256 bytes (max)
  • Data retention period : 20 years
  • Package : VSOIC8 NB