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EDA ModelsEasyEDA
onsemi FDPC8013S
| Manufacturer | |
| MPN | FDPC8013S |
| LCSC Part # | C891125 |
| Packaging | PowerClip-33 |
| Customer # | |
| Key Attributes | 30V 55A 2W 3V 2 N-Channel PowerClip-33 FET, MOSFET Arrays RoHS |
| Datasheet | onsemi FDPC8013S |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | PowerClip-33 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 333pF;997pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| RDS(on) | 9.6mΩ@4.5V;2.7mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 827pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | PowerClip-33 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 333pF;997pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| RDS(on) | 9.6mΩ@4.5V;2.7mΩ@4.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 827pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The device contains two dedicated N-channel MOSFETs in a dual package. The switch nodes are internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) are designed for optimal power efficiency.
Features
AI Translation
- Q1: N-Channel
- Maximum rDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A
- Q2: N-Channel
- Maximum rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A
- Low-inductance package reduces rise/fall times, minimizing switching losses
- Integrated MOSFETs enable optimized layout, reducing circuit inductance and switching node ringing
- RoHS compliant
Applications
AI Translation
- Computing
- Communications
- General Point-of-Load
In-Stock: 100
100 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.8367 | $ 2.84 |
| 10+ | $ 2.4004 | $ 24.00 |
| 30+ | $ 2.1276 | $ 63.83 |
| 100+ | $ 1.8465 | $ 184.65 |
| 500+ | $ 1.7207 | $ 860.35 |
| 1,000+ | $ 1.6668 | $ 1666.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | PowerClip-33 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 333pF;997pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| RDS(on) | 9.6mΩ@4.5V;2.7mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 827pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | PowerClip-33 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 333pF;997pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 55A | |
| RDS(on) | 9.6mΩ@4.5V;2.7mΩ@4.5V | |
| Pd - Power Dissipation | 2W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 827pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The device contains two dedicated N-channel MOSFETs in a dual package. The switch nodes are internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) are designed for optimal power efficiency.
Features
AI Translation
- Q1: N-Channel
- Maximum rDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A
- Q2: N-Channel
- Maximum rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A
- Low-inductance package reduces rise/fall times, minimizing switching losses
- Integrated MOSFETs enable optimized layout, reducing circuit inductance and switching node ringing
- RoHS compliant
Applications
AI Translation
- Computing
- Communications
- General Point-of-Load
C891125 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| XRS306D | XNRUSEMI | PDFN-8L(3.3x3.3) | 1,570 | $0.1888 $0.1987 | ||
| SISF06DN-T1-GE3 | VISHAY | PowerPAK1212-8SCD | 32 | $ 2.0797 | ||
| SISF04DN-T1-GE3 | VISHAY | PowerPAK1212-8SCD | 130 | $ 1.7159 | ||
| AONP36320 | AOS | DFN-8-EP(3.3x3.3) | 0 | $ 1.0116 |