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EDA ModelsEasyEDA
onsemi FDMS8680
| Manufacturer | |
| MPN | FDMS8680 |
| LCSC Part # | C891108 |
| Packaging | Power56-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 35A Power56-8 |
| Datasheet | onsemi FDMS8680 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Output Capacitance(Coss) | 555pF | |
| Ciss-Input Capacitance | 1.59nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Output Capacitance(Coss) | 555pF | |
| Ciss-Input Capacitance | 1.59nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
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Introduction
AI Translation
The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Features
AI Translation
- Max rDS(on)=7.0mΩ at VGS=10V, ID=14A
- Max rDS(on)=11.0mΩ at VGS=4.5V, ID=11.5A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- RoHS Compliant
Applications
AI Translation
- Low Side for Synchronous Buck to Power Core Processor
- Secondary Side Synchronous Rectifier
- Low Side Switch in POL DC/DC Converter
- Oring FET/ Load Switch
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In-Stock: 3
3 In stock, ships now
Discontinued
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5976 | $ 0.60 |
| 10+ | $ 0.5838 | $ 5.84 |
| 30+ | $ 0.5731 | $ 17.19 |
| 100+ | $ 0.5638 | $ 56.38 |
Standard Packaging3000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Output Capacitance(Coss) | 555pF | |
| Ciss-Input Capacitance | 1.59nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Output Capacitance(Coss) | 555pF | |
| Ciss-Input Capacitance | 1.59nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 145pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Features
AI Translation
- Max rDS(on)=7.0mΩ at VGS=10V, ID=14A
- Max rDS(on)=11.0mΩ at VGS=4.5V, ID=11.5A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- RoHS Compliant
Applications
AI Translation
- Low Side for Synchronous Buck to Power Core Processor
- Secondary Side Synchronous Rectifier
- Low Side Switch in POL DC/DC Converter
- Oring FET/ Load Switch
C891108 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HSBA3068 | HUASHUO | Similar | PRPAK5x6-8L | 435 | $ 0.236 | ||
| HSBA3052 | HUASHUO | Similar | PRPAK5x6-8L | 1,735 | $ 0.1207 | ||
| CMSA6504A | Cmos | Similar | DFN-8(5x6) | 80 | $0.3800 $0.3999 | ||
| HSBA4016 | HUASHUO | Similar | PRPAK5x6-8L | 3,110 | $ 0.2271 | ||
| SWHA069R10VS | Samwin | Similar | DFN5x6-8 | 4 | $ 0.5605 |