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EDA ModelsEasyEDA
onsemi DTC114TET1G
| Manufacturer | |
| MPN | DTC114TET1G |
| LCSC Part # | C890583 |
| Packaging | SOT-416-3 |
| Customer # | |
| Key Attributes | 50V 160 100mA 200mW NPN 1 NPN (Pre-Biased) SOT-416-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | onsemi DTC114TET1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-416-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-416-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor and a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S-prefix products for automotive and other applications with unique site and control change requirements; AEC-Q101 qualified with PPAP capability
- These devices are lead-free, halogen-free/BFR-free, and RoHS compliant
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-416-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-416-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor and a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S-prefix products for automotive and other applications with unique site and control change requirements; AEC-Q101 qualified with PPAP capability
- These devices are lead-free, halogen-free/BFR-free, and RoHS compliant
C890583 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |