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onsemi DTC114TET1GRoHS

Manufacturer
onsemi
MPN
DTC114TET1G
LCSC Part #
C890583
Packaging
SOT-416-3
Customer #
Key Attributes
50V 160 100mA NPN 1 NPN (Pre-Biased) 200mW SOT-416-3 Single, Pre-Biased Bipolar Transistors RoHS
Datasheetpdf icononsemi DTC114TET1G
In-Stock: 210
210 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0397$ 0.40
100+$ 0.0389$ 3.89
300+$ 0.0383$ 11.49
1,000+$ 0.0377$ 37.70
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufactureronsemi
PackagingSOT-416-3
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain160
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor10kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5.0V
Input Voltage (VI(on)@Ic,Vce)1.7V
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor and a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.

Features

AI Translation
  • Simplified circuit design
  • Board space savings
  • Reduced component count
  • S-prefix products for automotive and other applications with unique site and control change requirements; AEC-Q101 qualified with PPAP capability
  • These devices are lead-free, halogen-free/BFR-free, and RoHS compliant