DIODES ZXTC2045E6TA
| Manufacturer | |
| MPN | ZXTC2045E6TA |
| LCSC Part # | C84408 |
| Packaging | SOT-26 |
| Customer # | |
| Key Attributes | TRANS NPN+PNP 30V 1.5A SOT-26 |
| Datasheet | DIODES ZXTC2045E6TA |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-26 | |
| Current - Collector Cutoff | 20nA | |
| DC Current Gain | 180 | |
| Pd - Power Dissipation | 5.6W | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 7V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 265MHz | |
| Vce Saturation(VCE(sat)) | 375mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 1.5A | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-26 | |
| Current - Collector Cutoff | 20nA | |
| DC Current Gain | 180 | |
| Pd - Power Dissipation | 5.6W | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 7V |
| Type | Description | |
|---|---|---|
| Configuration | Standalone | |
| Transition frequency(fT) | 265MHz | |
| Vce Saturation(VCE(sat)) | 375mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 1.5A | |
| Operating Temperature | -55℃~+150℃ |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications.
Features
AI Translation
- NPN + PNP Combination
- BVCEO > 30 (-30)V
- BVCEV > 40 (-40)V
- ICM = 5 (-5)A Peak Pulse Current
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability PPAP Capable
Applications
AI Translation
- MOSFET and IGBT Gate Driving
- Motor Drive
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-26 | |
| Current - Collector Cutoff | 20nA | |
| DC Current Gain | 180 | |
| Pd - Power Dissipation | 5.6W | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 7V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 265MHz | |
| Vce Saturation(VCE(sat)) | 375mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 1.5A | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-26 | |
| Current - Collector Cutoff | 20nA | |
| DC Current Gain | 180 | |
| Pd - Power Dissipation | 5.6W | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 7V |
| Type | Description | |
|---|---|---|
| Configuration | Standalone | |
| Transition frequency(fT) | 265MHz | |
| Vce Saturation(VCE(sat)) | 375mV | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 1.5A | |
| Operating Temperature | -55℃~+150℃ |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications.
Features
AI Translation
- NPN + PNP Combination
- BVCEO > 30 (-30)V
- BVCEV > 40 (-40)V
- ICM = 5 (-5)A Peak Pulse Current
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability PPAP Capable
Applications
AI Translation
- MOSFET and IGBT Gate Driving
- Motor Drive
C84408 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



