LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
VISHAY SI7137DP-T1-GE3 product image
  • SI7137DP-T1-GE3 thumbnail 1
  • SI7137DP-T1-GE3 thumbnail 2
  • SI7137DP-T1-GE3 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

VISHAY SI7137DP-T1-GE3

Manufacturer
MPN
SI7137DP-T1-GE3
LCSC Part #
C784367
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET P-CH 20V 42A PowerPAKSO-8
DatasheetVISHAY SI7137DP-T1-GE3
RoHS Compliance2 documents available
Alternative Parts10
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 34,619
34,619 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6521$ 0.65
10+$ 0.5273$ 5.27
30+$ 0.4649$ 13.95
100+$ 0.4025$ 40.25
500+$ 0.3647$ 182.35
1,000+$ 0.345$ 345.00
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Output Capacitance(Coss)2.15nF
Pd - Power Dissipation6.25W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)42A
Gate Threshold Voltage (Vgs(th))500mV
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)1.95mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)20nF
Gate Charge(Qg)188nC
Vgs±12V
TypeP-Channel

Introduction

AI Translation

P-Channel 20 V (D-S) MOSFET,MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. PowerPAK is a new package technology that addresses these issues. The PowerPAK SO-8 utilizes the same footprint and the same pin-outs as the standard SO-8. This allows PowerPAK to be substituted directly for a standard SO-8 package. Being a leadless package, PowerPAK SO-8 utilizes the entire SO-8 footprint, freeing space normally occupied by the leads, and thus allowing it to hold a larger die than a standard SO-8. The bottom of the die attach pad is exposed for the purpose of providing a direct, low resistance thermal path to the substrate the device is mounted on. Finally, the package height is lower than the standard SO-8, making it an excellent choice for applications with space constraints.

Features

AI Translation
  • TrenchFET Gen III p-channel power MOSFET
  • 100 % Rg and UIS tested
  • RoHS COMPLIANT HALOGEN FREE

Applications

AI Translation
  • Adaptor switch
  • Battery switch
  • Load switch

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
HSBA90P02HUASHUOPRPAK5x6-8L690$ 0.5304
CMSA6411CmosDFN-8(5x6)31$0.5440 $0.5726
DMP2003UPS-13DIODESPowerDI5060-81$ 1.442
LWP2003AD5Lewa MicroPDFN-8L(5x6)5,000$ 0.6503
CMSA6683CmosDFN-8(5x6)10$0.3138 $0.3303
AON6411AOSDFN-8(5x6)6,000$ 1.0244
SIRS4301DP-T1-GE3VISHAYPowerPAKSO-8307$ 4.4084
TPSI7137DP-T1-GE3TECH PUBLICPDFN-8(5x6)4,790$0.3507 $0.3691
AON6411TECH PUBLICPDFN-8(5x6)4,400$0.3564 $0.3751
TPM2090PD56TECH PUBLICPDFN-8(5x6)200$0.4208 $0.4429