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EDA-ModelleEasyEDA
VBsemi Elec IPB90N04S4-02-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | IPB90N04S4-02-VB |
| LCSC-Nr. | C7568958 |
| Verp. | TO-263(D2PAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 150A TO-263(D2PAK) |
| Datenblatt |  VBsemi Elec IPB90N04S4-02-VB |
| Alternative Teile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench Power MOSFET
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
Anwendungen
KI-Übersetzung
- Synchronous rectification
- Power supply
Vorrätig: 20
20 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.5195$ 1.2916 | $ 1.29 |
| 10+ | $ 1.2686$ 1.0784 | $ 10.78 |
| 50+ | $ 1.1305$ 0.9610 | $ 48.05 |
| 100+ | $ 0.9733$ 0.8274 | $ 82.74 |
| 500+ | $ 0.9034$ 0.7679 | $ 383.95 |
| 1,000+ | $ 0.8717$ 0.7410 | $ 741.00 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 650pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 120nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench Power MOSFET
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
Anwendungen
KI-Übersetzung
- Synchronous rectification
- Power supply
C7568958 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| PSMN1R1-40BS,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK761R6-40E,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK963R1-40E,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK965R4-40E,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| PSMN2R2-40BS,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK762R6-40E,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK761R7-40E,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK9604-40A,118-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK961R6-40E-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK662R4-40C-VB | VBsemi Elec | TO-263 | 5 | $1.6139 $1.6988 | ||
| BUK764R0-40E-VB | VBsemi Elec | TO-263 | 5 | $1.5984 $1.6825 | ||
| 4N04H2-VB TO263 | VBsemi Elec | TO-263(D2PAK) | 10 | $1.2390 $1.4576 | ||
| 4N0403D TO263-VB | VBsemi Elec | TO-263(D2PAK) | 20 | $1.2916 $1.5195 | ||
| BUK761R7-40E-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $1.2390 $1.4576 | ||
| BUK763R1-40B-VB | VBsemi Elec | TO-263 | 10 | $1.6139 $1.6988 | ||
| BUK963R2-40B-VB | VBsemi Elec | TO-263 | 10 | $1.6139 $1.6988 | ||
| PSMN2R8-40BS-VB | VBsemi Elec | TO-263 | 10 | $1.6139 $1.6988 | ||
| BUK763R6-40C,118-VB | VBsemi Elec | TO-263 | 5 | $1.8603 $1.9582 | ||
| BUK762R9-40E,118-VB | VBsemi Elec | TO-263 | 0 | $1.5984 $1.6825 | ||
| VBL1402 | VBsemi Elec | TO-263 | 0 | $ 2.0824 |