VBsemi Elec AOD210-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AOD210-VB |
| LCSC-Nr. | C7568753 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V TO-252 |
| Datenblatt | |
| Alternative Teile | 11 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 1.525nF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.201nF | |
| Gate Charge(Qg) | 151nC@10V;71.5nC@4.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 1.525nF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.201nF | |
| Gate Charge(Qg) | 151nC@10V;71.5nC@4.5V | |
| Type | N-Channel |
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Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
-OR Gate-Server-DC/DC
Vorrätig: 14
14 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5938$ 0.5048 | $ 0.50 |
| 10+ | $ 0.4827$ 0.4103 | $ 4.10 |
| 30+ | $ 0.4271$ 0.3631 | $ 10.89 |
| 100+ | $ 0.3732$ 0.3173 | $ 31.73 |
| 500+ | $ 0.3398$ 0.2889 | $ 144.45 |
| 1,000+ | $ 0.3224$ 0.2741 | $ 274.10 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 1.525nF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.201nF | |
| Gate Charge(Qg) | 151nC@10V;71.5nC@4.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 1.525nF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.201nF | |
| Gate Charge(Qg) | 151nC@10V;71.5nC@4.5V | |
| Type | N-Channel |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
-OR Gate-Server-DC/DC
C7568753 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| PHD97NQ03LT,118-VB | VBsemi Elec | TO-252 | 5 | $0.6169 $0.6493 | ||
| PHD101NQ03LT,118-VB | VBsemi Elec | TO-252 | 5 | $0.6169 $0.6493 | ||
| BUK724R5-30C118-VB | VBsemi Elec | TO-252 | 5 | $0.6169 $0.6493 | ||
| PHD71NQ03LT,118-VB | VBsemi Elec | TO-252 | 5 | $0.6169 $0.6493 | ||
| AOD510-VB | VBsemi Elec | TO-252 | 100 | $0.4913 $0.578 | ||
| EMB04N03A-VB | VBsemi Elec | TO-252 | 50 | $0.5107 $0.6008 | ||
| NVD4806NT4G-VB | VBsemi Elec | TO-252 | 50 | $0.4981 $0.5859 | ||
| IRFR3709ZT-VB | VBsemi Elec | TO-252 | 20 | $0.6622 $0.697 | ||
| 4905NG-VB | VBsemi Elec | TO-252 | 20 | $0.4859 $0.5716 | ||
| SM3106NSU-VB | VBsemi Elec | TO-252 | 20 | $0.4859 $0.5716 | ||
| IRFR3709ZCT-VB | VBsemi Elec | TO-252 | 10 | $0.6803 $0.7161 |



