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HUASHUO HSBA70P06

Manufacturer
HUASHUOAsian Brands
MPN
HSBA70P06
LCSC Part #
C7543701
Packaging
PRPAK5x6-8
Customer #
Key Attributes
MOSFET P-CH 60V 72A PRPAK5x6-8
DatasheetHUASHUO HSBA70P06
RoHS Compliance1 documents available
Alternative Parts2
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingPRPAK5x6-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)72A
Ciss-Input Capacitance5.2nF
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss)50pF
RDS(on)6mΩ@10V
Number1 P-Channel
Gate Charge(Qg)85nC@10V
Gate Threshold Voltage (Vgs(th))3V
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Introduction

AI Translation

HSBA70P06 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBA70P06 complies with RoHS and green product requirements, is 100% guaranteed for avalanche energy capability (EAS), and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • 100% guaranteed avalanche energy capability (EAS)
  • Green/RoHS-compliant devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology