VBsemi Elec IRF710PBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF710PBF-VB |
| LCSC Part # | C7524996 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 4.5A TO-220AB |
| Datasheet | VBsemi Elec IRF710PBF-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.017nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.7Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.017nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.7Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Features
AI Translation
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.017nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.7Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.017nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 1.7Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
C7524996 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



