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VBsemi Elec FDB047N10-VB

Manufacturer
VBsemi ElecAsian Brands
MPN
FDB047N10-VB
LCSC Part #
C7524894
Packaging
TO-263(D2PAK)
Customer #
Key Attributes
MOSFET N-CH 100V 140A TO-263(D2PAK)
DatasheetVBsemi Elec FDB047N10-VB
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-263(D2PAK)
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)140A
Ciss-Input Capacitance5.5nF
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss)280pF
RDS(on)4mΩ@10V
Number1 N-channel
Gate Charge(Qg)110nC@10V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

AGM85P10D combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). The device is ideal for load switching and battery protection applications.

Features

AI Translation
  • Trench power MOSFET
  • Low thermal resistance, new package
  • 100% gate resistance (Rg) tested
  • RoHS compliant

Applications

AI Translation
  • MB/VGA core voltage
  • Synchronous rectifier for switching power supply secondary side
  • Point-of-load applications
  • Brushless DC motor driver