JSMSEMI IR21844STRPBF-JSM

The IR21844S is a high-voltage, high-speed power MOSFET/IGBT high- and low-side gate driver IC featuring separated logic ground and power ground for improved isolation of power stage noise from logic circuitry. Dead time is flexibly configurable via external resistors. The device integrates protection circuits including high- and low-side UVLO and overvoltage clamp circuits, with high-current pulse output capability. Logic inputs are compatible with CMOS or LSTTL logic output levels down to 3.3V. The output current capability is up to 4A, and the floating channel supports a maximum operating voltage of 700V. Suitable for driving N-channel high-voltage power MOSFETs, IGBTs, and similar devices. The IR21844S is available in a SOP-14 package and operates over a temperature range of -40°C to 125°C.

• Floating channel for bootstrap operation
• Maximum operating voltage: 700V
• Compatible with 3.3V and 5V input logic
• Single input (IN) dual output logic
• Shutdown input logic disables both high- and low-side outputs simultaneously
• Dead time adjustable via external resistor (RDT):
  • DT = 400ns @ RDT = 0
  • DT = 5μs @ RDT = 200kΩ
• dV/dt immunity
• Gate drive voltage: 10V to 20V
• High- and low-side UVLO
  • UVLO positive-going threshold: 8.9V
  • UVLO negative-going threshold: 8.2V
• Matched propagation delay for high and low side
• Separate logic and power grounds
• Drive current capability:
  • Source/Sink = 4A/4A
• RoHS compliant
• SOP-14 package

• General-purpose inverters
• Half-bridge and full-bridge converters in AC and DC power supplies
• High-density switching power supplies for servers, telecom, IT, and industrial infrastructure
• Solar inverters, motor drives, and UPS