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Hangzhou Silan Microelectronics SFRD92-02AEPS
| Manufacturer | Hangzhou Silan MicroelectronicsAsian Brands |
| MPN | SFRD92-02AEPS |
| LCSC Part # | C7465563 |
| Packaging | - |
| Customer # | |
| Key Attributes | 200V 950mV@10A 20A Single Diodes |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@10A | |
| Reverse Leakage Current (Ir) | 2uA | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Type | Description | |
|---|---|---|
| Diode Configuration | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@10A | |
| Reverse Leakage Current (Ir) | 2uA | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | - |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@10A | |
| Reverse Leakage Current (Ir) | 2uA | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Type | Description | |
|---|---|---|
| Diode Configuration | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@10A | |
| Reverse Leakage Current (Ir) | 2uA | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | - |
Help & FeedbackShow similar products (0) >
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |