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Wolfspeed C4D20120A

Manufacturer
MPN
C4D20120A
LCSC Part #
C7457644
Packaging
TO-220-2
Customer #
Key Attributes
1.2kV 1.8V@20A 54.5A TO-220-2 Single Diodes RoHS
DatasheetWolfspeed C4D20120A
Alternative Parts2
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerWolfspeed
PackagingTO-220-2
Diode Configuration-
Operating Junction Temperature Range-55℃~+175℃
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.8V@20A
Reverse Leakage Current (Ir)200uA@1200V
Non-Repetitive Peak Forward Surge Current130A
Current - Rectified54.5A

Introduction

AI Translation

Leveraging the performance advantages of silicon carbide (SiC) Schottky barrier diodes, power electronic systems can achieve higher efficiency standards than silicon-based solutions, while also enabling higher frequency and power density. SiC diodes can be easily paralleled to meet various application requirements without concern for thermal runaway. Combined with the reduced thermal management requirements and improved thermal performance of SiC products, SiC diodes can deliver lower overall system costs across a wide range of applications. Package Type: TO-220-2 Marking: C4D20120A

Features

AI Translation
  • Low forward voltage (VF) drop with positive temperature coefficient
  • Zero reverse recovery current / forward recovery voltage
  • Temperature-independent switching characteristics

Applications

AI Translation

Industrial switch-mode power supplies, uninterruptible power supplies and auxiliary power supplies, power factor correction (PFC) and DC-DC stage boost, solar inverters