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AGMSEMI AGM10N65F

Manufacturer
AGMSEMIAsian Brands
MPN
AGM10N65F
LCSC Part #
C7431155
Packaging
TO-220F
Customer #
Key Attributes
MOSFET N-CH 650V 10A TO-220F
DatasheetAGMSEMI AGM10N65F
RoHS Compliance1 documents available
Alternative Parts4
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAGMSEMI
PackagingTO-220F
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Output Capacitance(Coss)127pF
Current - Continuous Drain(Id)10A
Ciss-Input Capacitance1.702nF
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss)4.3pF
RDS(on)770mΩ@10V
Number1 N-channel
Gate Charge(Qg)48nC@10V
Gate Threshold Voltage (Vgs(th))4V
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Introduction

AI Translation

AGM10N65F combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). The device is ideal for load switching and battery protection applications.

Features

AI Translation
  • Advanced high cell density trench technology
  • Low RDS(ON) for minimized conduction losses
  • Low gate charge for fast switching
  • Low thermal resistance
  • 100% avalanche tested
  • 100% DVDS tested

Applications

AI Translation
  • Electronic ballasts - Electronic transformers - Switch-mode power supplies