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VISHAY IRLU110PBF
| Manufacturer | |
| MPN | IRLU110PBF |
| LCSC Part # | C727583 |
| Packaging | TO-251-3 |
| Customer # | |
| Key Attributes | 100V 4.3A 540mΩ@5V 1 N-channel N-Channel TO-251-3 Single FETs, MOSFETs RoHS |
| Datasheet | VISHAY IRLU110PBF |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 2.5W;25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 540mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 6.1nC@5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 2.5W;25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.3A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 540mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 6.1nC@5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
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Introduction
AI Translation
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features
AI Translation
- Halogen-free According to IEC 61249-2-2 Definition
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Surface Mount (IRLR110, SiHLR110)
- Straight Lead (IRLU110, SiHLU110)
- Available in Tape and Reel
- Logic-Level Gate Drive
- RDS(on) Specified at VGS=4 V and 5 V
- Compliant to RoHS Directive 2002/95/EC
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7471 | $ 0.75 |
| 200+ | $ 0.2902 | $ 58.04 |
| 500+ | $ 0.2794 | $ 139.70 |
| 1,000+ | $ 0.2748 | $ 274.80 |
Standard Packaging75/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 2.5W;25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 540mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 6.1nC@5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 80pF | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 2.5W;25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.3A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 540mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 6.1nC@5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features
AI Translation
- Halogen-free According to IEC 61249-2-2 Definition
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Surface Mount (IRLR110, SiHLR110)
- Straight Lead (IRLU110, SiHLU110)
- Available in Tape and Reel
- Logic-Level Gate Drive
- RDS(on) Specified at VGS=4 V and 5 V
- Compliant to RoHS Directive 2002/95/EC
C727583 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| VBFB1102M | VBsemi Elec | Similar | TO-251 | 9 | $0.3232 $0.3802 | ||
| IRFU110PBF | VISHAY | Similar | IPAK(TO-251) | 9 | $ 1.1603 | ||
| MOT8N65MC | MOT | Similar | TO-251 | 50 | $ 0.8708 | ||
| STU7N65M2 | ST | Similar | IPAK | 30 | $ 1.8304 | ||
| VBFB1203M | VBsemi Elec | Similar | TO-251 | 182 | $0.4603 $0.5415 |