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VISHAY SI8481DB-T1-E1

Manufacturer
MPN
SI8481DB-T1-E1
LCSC Part #
C727389
Packaging
MicroFoot-4
Customer #
Key Attributes
1.1W 20V 9.7A 21mΩ@4.5V 1 P-Channel P-Channel MicroFoot-4 Single FETs, MOSFETs RoHS
DatasheetVISHAY SI8481DB-T1-E1
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingMicroFoot-4
Output Capacitance(Coss)320pF
Ciss-Input Capacitance2.5nF
Pd - Power Dissipation1.1W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)9.7A
Reverse Transfer Capacitance (Crss)81pF
RDS(on)21mΩ@4.5V
Number1 P-Channel
Gate Charge(Qg)47nC@4.5V
Vgs±8V
Gate Threshold Voltage (Vgs(th))900mV
TypeP-Channel

Features

AI Translation
  • TrenchFET Gen III P-Channel Power MOSFET
  • Maximum height as low as 0.6 mm
  • Low on-resistance

Applications

AI Translation
  • Load Switch
  • Power management for battery-powered, mobile, and wearable devices