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DIODES DMT64M1LCG-13

Manufacturer
MPN
DMT64M1LCG-13
LCSC Part #
C7264724
Packaging
VDFN3333-8
Customer #
Key Attributes
1.2W 65V 5.4mΩ@10V 1 N-channel N-Channel VDFN3333-8 Single FETs, MOSFETs RoHS
DatasheetDIODES DMT64M1LCG-13
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingVDFN3333-8
Output Capacitance(Coss)905pF
Ciss-Input Capacitance2.626nF
Pd - Power Dissipation1.2W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage65V
Current - Continuous Drain(Id)16.7A;67.8A
Reverse Transfer Capacitance (Crss)91pF
RDS(on)5.4mΩ@10V
Number1 N-channel
Gate Charge(Qg)51.4nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))2.5V
TypeN-Channel

Introduction

AI Translation

This next-generation N-channel enhancement-mode MOSFET is designed to minimize RDS(ON) while maintaining excellent switching performance. The device is ideal for notebook battery power management and load switching applications.

Features

AI Translation
  • Fast switching
  • Improved dv/dt capability
  • Excellent package with good thermal dissipation
  • Epoxy meets UL 94 V-0 flammability rating
  • Moisture Sensitivity Level 1
  • Halogen-free "Green" device
  • Lead-free finish/RoHS compliant (suffix "P" indicates RoHS compliance, see ordering information)

Applications

AI Translation
  • Laptop battery power management
  • Load switch
  • Synchronous rectifier
  • Power management function
  • DC-DC converter