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PANJIT PJD4NA70_L2_00001
| Manufacturer | PANJITAsian Brands |
| MPN | PJD4NA70_L2_00001 |
| LCSC Part # | C7261220 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 700V 4A 77W 2.8Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | PANJIT PJD4NA70_L2_00001 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 514pF | |
| Pd - Power Dissipation | 77W | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 4A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 514pF | |
| Pd - Power Dissipation | 77W | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
CENTRAL SEMICONDUCTOR's CWDM3011N is a high-current silicon N-channel enhancement-mode MOSFET designed for high-speed pulse amplifier and driver applications. This energy-efficient MOSFET features low on-resistance rDS(ON), low gate charge, and low threshold voltage.
Features
AI Translation
- R DS(ON) < 2.8Ω at V GS = 10V, I D = 2A
- High switching speed
- Improved dv/dt capability
- Low gate charge
- Low reverse transfer capacitance
- Lead-free product compliant with EU RoHS Directive 2011/65/EU
- Green molding compound (halogen-free) compliant with IEC61249
Applications
AI Translation
- Load/Power Switch
- DC-DC Conversion Circuit
- Power Management
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9207 | $ 0.92 |
| 200+ | $ 0.3683 | $ 73.66 |
| 500+ | $ 0.3556 | $ 177.80 |
| 1,000+ | $ 0.3492 | $ 349.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 514pF | |
| Pd - Power Dissipation | 77W | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 4A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 514pF | |
| Pd - Power Dissipation | 77W | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
CENTRAL SEMICONDUCTOR's CWDM3011N is a high-current silicon N-channel enhancement-mode MOSFET designed for high-speed pulse amplifier and driver applications. This energy-efficient MOSFET features low on-resistance rDS(ON), low gate charge, and low threshold voltage.
Features
AI Translation
- R DS(ON) < 2.8Ω at V GS = 10V, I D = 2A
- High switching speed
- Improved dv/dt capability
- Low gate charge
- Low reverse transfer capacitance
- Lead-free product compliant with EU RoHS Directive 2011/65/EU
- Green molding compound (halogen-free) compliant with IEC61249
Applications
AI Translation
- Load/Power Switch
- DC-DC Conversion Circuit
- Power Management
C7261220 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| MDD4N65D | MDD(Microdiode Semiconductor) | Similar | TO-252 | 14,510 | $0.1722 $0.1831 | ||
| BCD4N65 | baocheng | Similar | TO-252 | 2,505 | $0.2506 $0.2637 | ||
| SVF4N65DTR | Hangzhou Silan Microelectronics | Similar | TO-252-2(DPAK) | 7,720 | $ 0.2625 | ||
| MJD08N70 | MIRACLE POWER | Similar | TO-252 | 80 | $0.3868 $0.4071 | ||
| D4N70 | Jingdao Microelectronics | Similar | TO-252W | 2,115 | $ 0.1873 |