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ST STF20N65M5
| Manufacturer | |
| MPN | STF20N65M5 |
| LCSC Part # | C726093 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 18A TO-220-3 |
| Datasheet | ST STF20N65M5 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 38pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 38pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well - known PowerMESH™ horizontal layout. The resulting products offer extremely low on - resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Features
AI Translation
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
In-Stock: 29
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.3135 | $ 2.31 |
| 10+ | $ 1.9734 | $ 19.73 |
| 30+ | $ 1.7606 | $ 52.82 |
| 100+ | $ 1.5429 | $ 154.29 |
| 500+ | $ 1.4446 | $ 722.30 |
| 1,000+ | $ 1.4027 | $ 1402.70 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 38pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 38pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.7pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.434nF | |
| Gate Charge(Qg) | 36nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well - known PowerMESH™ horizontal layout. The resulting products offer extremely low on - resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Features
AI Translation
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C726093 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STP20N65M5 | ST | TO-220 | 859 | $ 2.3433 | ||
| SP20MF65TQ | Siliup | TO-220-3L | 119 | $0.8907 $0.9896 | ||
| HM16N60F-VB | VBsemi Elec | TO-220 | 50 | $ 1.7995 | ||
| R6011ENX-VB | VBsemi Elec | TO-220 | 41 | $ 1.899 | ||
| NTP190N65S3HF | onsemi | TO-220 | 28 | $ 3.6862 | ||
| WTM20N65AP | WPMtek | TO-220 | 49 | $ 1.1387 | ||
| IXTP24N65X2M | Littelfuse/IXYS | TO-220 | 50 | $ 6.909 | ||
| STP28N65M2 | ST | TO-220 | 2 | $ 5.848 | ||
| IXTP20N65X | Littelfuse | TO-220-3 | 0 | $ 15.4128 | ||
| IXFP18N65X2M | Littelfuse/IXYS | TO-220 | 0 | $ 4.0025 |