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micron MT29F4G08ABBDAHC-AIT:D product image
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micron MT29F4G08ABBDAHC-AIT:D

Manufacturer
micron
MPN
MT29F4G08ABBDAHC-AIT:D
LCSC Part #
C7235729
Packaging
VFBGA-63(10.5x13)
Customer #
Key Attributes
4Gbit 1.7V~1.95V Parallel VFBGA-63(10.5x13) Memory RoHS
Datasheetmicron MT29F4G08ABBDAHC-AIT:D
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QtyUnit Price(Reference Only)Total Amount
1+$ 13.0536$ 13.05
200+$ 5.2094$ 1041.88
500+$ 5.0348$ 2517.40
1,000+$ 4.9491$ 4949.10
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
Manufacturermicron
PackagingVFBGA-63(10.5x13)
Operating Temperature-40℃~+85℃
FeaturesRead buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function
Memory Size4Gbit
Voltage - Supply1.7V~1.95V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)700us
Page Programming Time (Tpp)200us
Write Cycle Time(tWC)-
Standby Supply Current-
InterfaceParallel
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Features

AI Translation
  • Open NAND Flash Interface (ONFI) 1.0-compliant
  • Single-level cell (SLC) technology
  • Organization:
    • Page size x8: 2112 bytes (2048 + 64 bytes); Page size x16: 1056 words (1024 + 32 words)
    • Block size: 64 pages (128K + 4K bytes)
    • Plane size: 2 planes x 2048 blocks per plane
    • Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks; 16Gb: 16,384 blocks
  • Asynchronous I/O performance: tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Array performance:
    • Read page: 25μs
    • Program page: 200μs (TYP: 1.8V, 3.3V)
    • Erase block: 700μs (TYP)
  • Command set: ONFI NAND Flash Protocol
  • Advanced command set:
    • Program page cache mode
    • Read page cache mode
    • One-time programmable (OTP) mode
    • Two-plane commands
    • Interleaved die (LUN) operations
    • Read unique ID
    • Block lock (1.8V only)
    • Internal data move
  • Operation status byte provides software method for detecting:
    • Operation completion
    • Pass/fail condition
    • Write-protect status
  • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
  • WP# signal: Write protect entire device
  • First block (block address 0oh) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.
  • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
  • RESET (FFh) required as first command after power-on
  • Alternate method of device initialization (Nand_Init) after power up (contact factory)
  • Internal data move operations supported within the plane from which data is read
  • Quality and reliability:
    • Data retention: 10 years
    • Endurance: 100,000 PROGRAM/ERASE cycles
  • Operating voltage range:
    • VCC: 2.7 - 3.6V
    • VCC: 1.7 – 1.95V
  • Operating temperature:
    • Commercial: 0°C to +70°C
    • Industrial (IT): -40°C to +85°C
    • Automotive Industrial (AIT): -40°C to +85°C
    • Automotive (AAT): -40°C to +105°C
  • Package:
    • 48-pin TSOP type 1, CPL2
    • 63-ball VFBGA