Central CMPT3906G TR PBFREE
| Manufacturer | |
| MPN | CMPT3906G TR PBFREE |
| LCSC Part # | C7230175 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 40V 100 200mA PNP SOT-23 Single Bipolar Transistors RoHS |
| Datasheet | Central CMPT3906G TR PBFREE |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 350mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 350mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
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Introduction
AI Translation
These devices are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2935 | $ 0.29 |
| 200+ | $ 0.1172 | $ 23.44 |
| 500+ | $ 0.1132 | $ 56.60 |
| 1,000+ | $ 0.1113 | $ 111.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 350mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 40V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 350mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 400mV |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.
C7230175 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

