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AOS AOW66616
| Manufacturer | |
| MPN | AOW66616 |
| LCSC Part # | C7214615 |
| Packaging | TO-262 |
| Customer # | |
| Key Attributes | 60V 3.4V 3.2mΩ@10V 1 N-channel TO-262 Single FETs, MOSFETs RoHS |
| Datasheet | AOS AOW66616 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A;140A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 6.2W;125W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A;140A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 6.2W;125W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 60nC@10V |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.7349 | $ 1.73 |
| 200+ | $ 0.6921 | $ 138.42 |
| 500+ | $ 0.6699 | $ 334.95 |
| 1,000+ | $ 0.6572 | $ 657.20 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A;140A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 6.2W;125W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A;140A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 6.2W;125W | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 60nC@10V |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDI045N10A-F102 | onsemi | TO-262-3 | 66 | $ 5.5189 | ||
| IPI024N06N3 G | Infineon | TO-262-3 | 50 | $ 3.7385 | ||
| IRFSL3006PBF | Infineon | TO-262-3 | 2 | $ 22.4653 | ||
| IRFSL3207ZPBF | Infineon | TO-262-3 | 21 | $ 6.1947 | ||
| AOW2500 | AOS | TO-262 | 0 | $ 2.4709 | ||
| IRFSL7734PBF | Infineon | TO-262-3 | 0 | $ 1.1623 | ||
| VBNCB1603 | VBsemi Elec | TO-262 | 0 | $ 2.0824 | ||
| AUIRFSL3206 | Infineon | TO-262 | 0 | $ 1.9211 | ||
| IRFSL7534PBF | Infineon | TO-262-3 | 0 | $ 2.5733 | ||
| IRFSL7730PBF | Infineon | TO-262-3 | 0 | $ 2.6733 |