VISHAY IRFZ44SPBF
| Manufacturer | |
| MPN | IRFZ44SPBF |
| LCSC Part # | C7211202 |
| Packaging | D2PAK(TO-263) |
| Customer # | |
| Key Attributes | 60V 50A 2V 28mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS |
| Datasheet | VISHAY IRFZ44SPBF |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3.7W;150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 67nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.7W;150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 67nC@10V |
Introduction
The third-generation power MOSFET employs advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of power MOSFETs, provides designers with a highly efficient and reliable device suitable for a wide range of applications. The D2PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. Among all existing surface-mount packages, it offers the highest power handling capability and the lowest possible on-resistance. Due to its low internal connection resistance, the D2PAK is ideal for high-current applications and can dissipate up to 2.0 W of power in typical SMT applications. For low-profile applications, through-hole versions (IRFZ44L, SiHFZ44L) are available.
Features
- Advanced process technology
- Surface mount (IRFZ44S, SiHFZ44S)
- Low-profile through-hole (IRFZ44L, SiHFZ44L)
- 175°C operating temperature
- Fast switching
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.1793 | $ 3.18 |
| 200+ | $ 1.2699 | $ 253.98 |
| 500+ | $ 1.227 | $ 613.50 |
| 1,000+ | $ 1.2064 | $ 1206.40 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3.7W;150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 67nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.7W;150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 67nC@10V |
Introduction
The third-generation power MOSFET employs advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of power MOSFETs, provides designers with a highly efficient and reliable device suitable for a wide range of applications. The D2PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. Among all existing surface-mount packages, it offers the highest power handling capability and the lowest possible on-resistance. Due to its low internal connection resistance, the D2PAK is ideal for high-current applications and can dissipate up to 2.0 W of power in typical SMT applications. For low-profile applications, through-hole versions (IRFZ44L, SiHFZ44L) are available.
Features
- Advanced process technology
- Surface mount (IRFZ44S, SiHFZ44S)
- Low-profile through-hole (IRFZ44L, SiHFZ44L)
- 175°C operating temperature
- Fast switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IRL2910STRLPBF | Infineon | Similar | D2PAK | 5 | $ 2.9556 | ||
| IRLZ44SPBF | VISHAY | Similar | D2PAK(TO-263) | 1 | $ 4.3689 | ||
| IRLZ34SPBF-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 14 | $0.6425 $0.7558 | ||
| IRLZ34NSPBF-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 22 | $ 1.0299 | ||
| RF1S30N06LESM-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 4 | $0.6500 $0.7646 |