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Infineon IPB60R080P7ATMA1

Manufacturer
Infineon
MPN
IPB60R080P7ATMA1
LCSC Part #
C7210840
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 23A TO-263-3
DatasheetInfineon IPB60R080P7ATMA1
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-3
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Output Capacitance(Coss)37pF
Current - Continuous Drain(Id)23A
Ciss-Input Capacitance2.18nF
Pd - Power Dissipation129W
RDS(on)80mΩ@10V
Number1 N-channel
Gate Charge(Qg)51nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.5V
TypeN-Channel
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Introduction

AI Translation

The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Features

AI Translation
  • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
  • Significant reduction of switching and conduction losses
  • Excellent ESD robustness ~2kV (HBM) for all products
  • Better RDS(on)/package products compared to competition enabled by a low Ros(on)A (below 1Ohmmm²)
  • Fully qualified acc. JEDEC for Industrial Applications

Applications

AI Translation
  • PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.