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Infineon/CYPRESS S29GL512T10GHI020Y product image
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Infineon/CYPRESS S29GL512T10GHI020Y

Manufacturer
Infineon/CYPRESS
MPN
S29GL512T10GHI020Y
LCSC Part #
C7070408
Packaging
FBGA-56(7x9)
Customer #
Key Attributes
512Mbit 2.7V~3.6V 5MHz Parallel FBGA-56(7x9) Memory
DatasheetInfineon/CYPRESS S29GL512T10GHI020Y
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.6475$ 2.65
200+$ 1.0563$ 211.26
500+$ 1.0214$ 510.70
1,000+$ 1.0048$ 1004.80
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingFBGA-56(7x9)
Operating Temperature-40℃~+105℃
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction;Power lock protection
Memory Size512Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency5MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current200uA
InterfaceParallel
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Introduction

AI Translation

The Cypress S29GL01GT/512T are MirrorBit Eclipse flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

Features

AI Translation
  • 45 nm MirrorBit Eclipse Technology
  • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
  • Versatile I/O feature – Wide I/O voltage range (V10): 1.65 V to VCC
  • x8/x16 data bus
  • Asynchronous 32-byte Page read
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Automatic Error Checking and Correction (ECC) — internal hardware ECC with single bit error correction
  • Sector Erase – Uniform 128-kbyte sectors
  • Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector
  • Separate 2048-byte One Time Program (OTP) array – Four lockable regions (SSR0 - SSR3) – SSR0 is Factory Locked – SSR3 is Password Read Protect
  • Common Flash Interface (CFI) parameter table
  • Temperature Range / Grade: – Industrial (-40 ℃ to +85 ℃) – Industrial Plus (-40 ℃ to +105 ℃) – Extended ( -40 ℃ to +125 ℃) – Automotive, AEC-Q100 Grade 3 (-40 ℃ to +85 ℃) – Automotive, AEC-Q100 Grade 2 (-40 ℃ to +105 ℃)
  • 100,000 Program / Erase Cycles
  • 20-year data retention
  • Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mmx11 mm – 64-ball LAE Fortified BGA, 9 mmx9 mm – 56-ball VBU Fortified BGA, 9 mmx7 mm