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Infineon IRFR2405TRPBF
| Manufacturer | |
| MPN | IRFR2405TRPBF |
| LCSC Part # | C70333 |
| Packaging | DPAK(TO-252AA) |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 56A DPAK(TO-252AA) |
| Datasheet | Infineon IRFR2405TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 110nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 110nC |
Introduction
Seventh Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well - known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D - Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through - hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- Lead - Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7369 | $ 0.74 |
| 10+ | $ 0.5905 | $ 5.91 |
| 30+ | $ 0.5157 | $ 15.47 |
| 100+ | $ 0.4425 | $ 44.25 |
| 500+ | $ 0.3986 | $ 199.30 |
| 1,000+ | $ 0.3758 | $ 375.80 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 110nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.43nF | |
| Gate Charge(Qg) | 110nC |
Introduction
Seventh Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well - known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D - Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through - hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- Lead - Free
C70333 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFR2405TR(UMW) | UMW | TO-252 | 430 | $ 0.2642 | ||
| STD60NF06T4 | ST | TO-252(DPAK) | 2,349 | $ 1.1148 | ||
| IRFR1018ETR(UMW) | UMW | TO-252 | 3,235 | $ 0.338 | ||
| IRFR1018ETRPBF | Infineon | TO-252 | 2,192 | $ 1.2703 | ||
| STD65N55F3 | ST | DPAK | 7 | $ 2.0784 | ||
| AUIRFR2405 | Infineon | DPAK(TO-252AA) | 0 | $ 1.0709 | ||
| IRFR2405TRLPBF | Infineon | DPAK | 0 | $ 1.524 | ||
| BUK7219-55A,118 | Nexperia | DPAK | 0 | $ 2.1404 | ||
| IPD90N06S405ATMA2 | Infineon | TO-252 | 0 | $ 2.3043 | ||
| IRFR1018EPBF-INF | Infineon | DPAK(TO-252AA) | 0 | $ 0.5092 |