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TI CSD87501L
| Manufacturer | |
| MPN | CSD87501L |
| LCSC Part # | C701751 |
| Packaging | PicostAr-10(1.5x3.4) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 14A PicostAr-10(1.5x3.4) |
| Datasheet | TI CSD87501L |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TI | |
| Packaging | PicostAr-10(1.5x3.4) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 246pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| RDS(on) | 7.8mΩ@10V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel | |
| Configuration | Common Drain | |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.11nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TI | |
| Packaging | PicostAr-10(1.5x3.4) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 246pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| RDS(on) | 7.8mΩ@10V | |
| Pd - Power Dissipation | 2.5W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel | |
| Configuration | Common Drain | |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.11nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
30V, 6.6mΩ, 3.37mm × 1.47mm LGA dual NexFET power MOSFET designed to minimize resistance and gate charge in a small form factor package. The device features a compact size and common-drain configuration, making it ideal for multi-cell battery pack applications and small handheld devices.
Features
AI Translation
- Low on-resistance
- Compact 3.37mm × 1.47mm footprint
- Ultra-thin 0.2mm height
- Lead-free
- RoHS compliant
- Halogen-free
- Gate ESD protection
Applications
AI Translation
- Battery Management
- Battery Protection
- USB Type-C/PD
Every Order Guarantee
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In-Stock: 144
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.02 | $ 1.02 |
| 10+ | $ 0.8196 | $ 8.20 |
| 30+ | $ 0.7194 | $ 21.58 |
| 100+ | $ 0.6209 | $ 62.09 |
| 500+ | $ 0.5338 | $ 266.90 |
| 1,000+ | $ 0.5026 | $ 502.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TI | |
| Packaging | PicostAr-10(1.5x3.4) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 246pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| RDS(on) | 7.8mΩ@10V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel | |
| Configuration | Common Drain | |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.11nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TI | |
| Packaging | PicostAr-10(1.5x3.4) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 246pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| RDS(on) | 7.8mΩ@10V | |
| Pd - Power Dissipation | 2.5W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel | |
| Configuration | Common Drain | |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.11nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
30V, 6.6mΩ, 3.37mm × 1.47mm LGA dual NexFET power MOSFET designed to minimize resistance and gate charge in a small form factor package. The device features a compact size and common-drain configuration, making it ideal for multi-cell battery pack applications and small handheld devices.
Features
AI Translation
- Low on-resistance
- Compact 3.37mm × 1.47mm footprint
- Ultra-thin 0.2mm height
- Lead-free
- RoHS compliant
- Halogen-free
- Gate ESD protection
Applications
AI Translation
- Battery Management
- Battery Protection
- USB Type-C/PD
C701751 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CSD87501LT | TI | PicostAr-10(1.5x3.4) | 204 | $ 1.2582 |