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HUASHUO HSM4006
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSM4006 |
| LCSC Part # | C700991 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 12A SOP-8 |
| Datasheet | HUASHUO HSM4006 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.332nF | |
| Gate Charge(Qg) | 18.8nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.332nF | |
| Gate Charge(Qg) | 18.8nC@4.5V |
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Introduction
AI Translation
HSM4006 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSM4006 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full functional reliability qualification.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green/eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 1,120
1,120 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2044 | $ 1.02 |
| 50+ | $ 0.1632 | $ 8.16 |
| 150+ | $ 0.1456 | $ 21.84 |
| 500+ | $ 0.1236 | $ 61.80 |
| 2,500+ | $ 0.101 | $ 252.50 |
| 5,000+ | $ 0.0951 | $ 475.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.332nF | |
| Gate Charge(Qg) | 18.8nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.332nF | |
| Gate Charge(Qg) | 18.8nC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSM4006 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSM4006 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full functional reliability qualification.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green/eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C700991 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |