LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Infineon/CYPRESS S29GL128S90DHI010 product image
  • S29GL128S90DHI010 thumbnail 1
  • S29GL128S90DHI010 thumbnail 2
  • S29GL128S90DHI010 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon/CYPRESS S29GL128S90DHI010RoHS

Manufacturer
Infineon/CYPRESS
MPN
S29GL128S90DHI010
LCSC Part #
C6998506
Packaging
FBGA-64(9x9)
Customer #
Key Attributes
128Mbit 2.7V~3.6V Parallel FBGA-64(9x9) Memory RoHS
Datasheetpdf iconInfineon/CYPRESS S29GL128S90DHI010
In-Stock: 7
7 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 4.597$ 4.60
10+$ 4.494$ 44.94
30+$ 4.4247$ 132.74
100+$ 4.357$ 435.70
Standard Packaging260/Full Tray
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingFBGA-64(9x9)
Operating Temperature-40℃~+85℃
FeaturesPower-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size128Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Page Programming Time (Tpp)-
Write Cycle Time(tWC)60ns
Standby Supply Current100uA
InterfaceParallel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Features

AI Translation
  • 65 nm MirrorBit Eclipse Technology
  • Single supply (vcc) for read / program / erase (2.7V to 3.6V)
  • Versatile I/O Feature – Wide I/O voltage range (V10): 1.65V to VCC
  • x16 data bus
  • Asynchronous 32-byte Page read
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Sector Erase – Uniform 128-kbyte sectors
  • Suspend and Resume commands for Program and Erase operations
  • Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced Sector Protection (ASP) – Volatile and no