Littelfuse IXFN80N60P3
| Manufacturer | |
| MPN | IXFN80N60P3 |
| LCSC Part # | C6884365 |
| Packaging | SOT-227B |
| Customer # | |
| Key Attributes | 600V 66A 3V 70mΩ@10V 1 N-channel SOT-227B Single FETs, MOSFETs RoHS |
| Datasheet | Littelfuse IXFN80N60P3 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | SOT-227B | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 66A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.1nF | |
| Gate Charge(Qg) | 190nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | SOT-227B | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 66A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.1nF | |
| Gate Charge(Qg) | 190nC@10V |
Introduction
The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The D²PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power handling capability and the lowest possible on-resistance of any available surface-mount package. Due to its low internal connection resistance, the D²PAK (TO-263) is suitable for high-current applications, capable of dissipating up to 2.0 W in typical SMT applications.
Features
- Industry-standard package
- Low intrinsic gate resistance
- miniBLOC package with AlN isolation
- Dynamic dv/dt rating
- Avalanche rated
- Fast intrinsic rectifier
- Low gate charge Qg
- Low on-resistance RDS(ON)
- Low drain-to-heatsink capacitance
- Low package inductance
- High power density
- Easy to mount
- Space-saving
Applications
- DC-DC Converters
- Battery Chargers
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies
- AC Motor Drives
- High-Speed Power Switching Applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 9.2125 | $ 9.21 |
| 200+ | $ 3.677 | $ 735.40 |
| 500+ | $ 3.5539 | $ 1776.95 |
| 1,000+ | $ 3.4924 | $ 3492.40 |
Standard Packaging10/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | SOT-227B | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 66A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.1nF | |
| Gate Charge(Qg) | 190nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | SOT-227B | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 66A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.1nF | |
| Gate Charge(Qg) | 190nC@10V |
Introduction
The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The D²PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power handling capability and the lowest possible on-resistance of any available surface-mount package. Due to its low internal connection resistance, the D²PAK (TO-263) is suitable for high-current applications, capable of dissipating up to 2.0 W in typical SMT applications.
Features
- Industry-standard package
- Low intrinsic gate resistance
- miniBLOC package with AlN isolation
- Dynamic dv/dt rating
- Avalanche rated
- Fast intrinsic rectifier
- Low gate charge Qg
- Low on-resistance RDS(ON)
- Low drain-to-heatsink capacitance
- Low package inductance
- High power density
- Easy to mount
- Space-saving
Applications
- DC-DC Converters
- Battery Chargers
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies
- AC Motor Drives
- High-Speed Power Switching Applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXFN82N60P | Littelfuse/IXYS | SOT-227B | 6 | $ 51.5397 | ||
| MS66N85IDF4 | MASPOWER | SOT-227 | 3 | $ 30.1531 | ||
| IXFN120N65X2 | Littelfuse/IXYS | SOT-227 | 16 | $ 57.3964 | ||
| APT60M60JLL | MICROCHIP | SOT-227B-4 | 0 | $ 203.556 | ||
| APT60M60JFLL | MICROCHIP | SOT-227B-4 | 0 | $ 211.9716 | ||
| IXFN82N60Q3 | Littelfuse/IXYS | SOT-227B | 0 | $ 54.8049 | ||
| IXFN100N65X2 | Littelfuse/IXYS | SOT-227B | 0 | $ 27.144 | ||
| MSC130SM120JCU2 | MICROCHIP | SOT-227 | 0 | $ 223.3039 | ||
| IXFN74N100X | Littelfuse | SOT-227B | 0 | $ 27.8739 | ||
| IXFN90N85X | Littelfuse/IXYS | SOT-227B | 0 | $ 63.0834 |