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VBsemi Elec FDS8447-NL-VB

Manufacturer
VBsemi ElecAsian Brands
MPN
FDS8447-NL-VB
LCSC Part #
C6705263
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 40V 10A SO-8
DatasheetVBsemi Elec FDS8447-NL-VB
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSO-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage40V
Current - Continuous Drain(Id)10A
Ciss-Input Capacitance2nF
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss)150pF
RDS(on)-
Number1 N-channel
Gate Charge(Qg)15nC@10V
Gate Threshold Voltage (Vgs(th))3V
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Introduction

AI Translation

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are manufactured using second-generation MDmesh™ technology. These innovative devices feature a new strip-layout vertical structure, offering ultralow on-resistance and excellent switching performance. They are ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.

Features

AI Translation
  • Halogen-free per IEC 61249-2-21
  • Trench power MOSFET
  • 100% gate resistance (Rg) tested
  • 100% unclamped inductive switching (UIS) tested
  • RoHS compliant per directive 2002/95/EC

Applications

AI Translation
  • Synchronous rectification
  • Point-of-load (POL), intermediate bus converter (IBC)
  • Secondary side
  • N-channel MOSFET