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EDA ModelsEasyEDA
micron MT29F2G16ABAEAWP-AIT:E TR
| Manufacturer | |
| MPN | MT29F2G16ABAEAWP-AIT:E TR |
| LCSC Part # | C6685614 |
| Packaging | TFSOP-48-18.4mm |
| Customer # | |
| Key Attributes | 2Gbit 2.7V~3.6V Parallel TFSOP-48-18.4mm Memory RoHS |
| Datasheet | micron MT29F2G16ABAEAWP-AIT:E TR |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFSOP-48-18.4mm | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 700us | |
| Page Programming Time (Tpp) | 200us | |
| Write Cycle Time(tWC) | 20ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFSOP-48-18.4mm | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 700us | |
| Page Programming Time (Tpp) | 200us | |
| Write Cycle Time(tWC) | 20ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
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Features
AI Translation
- Compliant with Open NAND Flash Interface 1.0 specification
- Single-level cell technology
- Organization
- Page size (x8): 2112 bytes (2048 + 64 bytes)
- Page size (x16): 1056 words (1024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Plane size: 2 planes, 1024 blocks per plane
- Device density: 2Gb: 2048 blocks
- Asynchronous I/O performance
- tRC/tWC: 20ns (3.3V), 25ns (1.8V)
- Array performance
- Page read: 25μs
- Page program: 200μs (typical: 1.8V, 3.3V)
- Block erase: 700μs (typical)
- Command set: ONFI NAND flash protocol
- Advanced command set
- Page program cache mode
- Page read cache mode
- One-time programmable mode
- Dual-plane commands
- Interleaved die operations
- Read ID
- Block locking (1.8V only)
- Internal data move
- Status byte provides software method for detecting:
- Operation complete
- Pass/fail status
- Write-protect status
- Ready/busy signal provides hardware method for detecting operation completion
- WP# signal: write-protects entire device
- First block (block address 00h) at factory shipment with ECC is in valid state. Refer to the Error Management section for minimum ECC requirements.
- Block 0 requires 1-bit ECC if program/erase cycles are fewer than 1000
- Reset command required as first command after power-up
- Alternative method for device initialization after power-up (contact factory)
- Supports internal data move operations within the plane being read
- Quality and reliability
- Data retention: 10 years
- Endurance: 100,000 program/erase cycles
- Operating voltage range
- VCC: 2.7 - 3.6V
- VCC: 1.7 - 1.95V
- Operating temperature
- Automotive grade: -40℃ to +85℃
- Automotive grade: -40℃ to +105℃
- Package
- 48-pin TSOP type 1, CPL
- 63-ball VFBGA
In-Stock: 5
5 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 8.7627 | $ 8.76 |
| 10+ | $ 8.5676 | $ 85.68 |
| 30+ | $ 8.4364 | $ 253.09 |
| 100+ | $ 8.3068 | $ 830.68 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFSOP-48-18.4mm | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 700us | |
| Page Programming Time (Tpp) | 200us | |
| Write Cycle Time(tWC) | 20ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFSOP-48-18.4mm | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 700us | |
| Page Programming Time (Tpp) | 200us | |
| Write Cycle Time(tWC) | 20ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compliant with Open NAND Flash Interface 1.0 specification
- Single-level cell technology
- Organization
- Page size (x8): 2112 bytes (2048 + 64 bytes)
- Page size (x16): 1056 words (1024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Plane size: 2 planes, 1024 blocks per plane
- Device density: 2Gb: 2048 blocks
- Asynchronous I/O performance
- tRC/tWC: 20ns (3.3V), 25ns (1.8V)
- Array performance
- Page read: 25μs
- Page program: 200μs (typical: 1.8V, 3.3V)
- Block erase: 700μs (typical)
- Command set: ONFI NAND flash protocol
- Advanced command set
- Page program cache mode
- Page read cache mode
- One-time programmable mode
- Dual-plane commands
- Interleaved die operations
- Read ID
- Block locking (1.8V only)
- Internal data move
- Status byte provides software method for detecting:
- Operation complete
- Pass/fail status
- Write-protect status
- Ready/busy signal provides hardware method for detecting operation completion
- WP# signal: write-protects entire device
- First block (block address 00h) at factory shipment with ECC is in valid state. Refer to the Error Management section for minimum ECC requirements.
- Block 0 requires 1-bit ECC if program/erase cycles are fewer than 1000
- Reset command required as first command after power-up
- Alternative method for device initialization after power-up (contact factory)
- Supports internal data move operations within the plane being read
- Quality and reliability
- Data retention: 10 years
- Endurance: 100,000 program/erase cycles
- Operating voltage range
- VCC: 2.7 - 3.6V
- VCC: 1.7 - 1.95V
- Operating temperature
- Automotive grade: -40℃ to +85℃
- Automotive grade: -40℃ to +105℃
- Package
- 48-pin TSOP type 1, CPL
- 63-ball VFBGA
C6685614 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |