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Littelfuse/IXYS IXDF602SI

Manufacturer
MPN
IXDF602SI
LCSC Part #
C6644522
Packaging
SOIC-8-EP
Customer #
Key Attributes
4.5V~35V 2A 2A SOIC-8-EP Gate Drivers RoHS
DatasheetLittelfuse/IXYS IXDF602SI
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerLittelfuse/IXYS
PackagingSOIC-8-EP
Input Logic Level - Low800mV
Low Level Delay Time-
High Level Delay Time-
Quiescent Current10uA
Input Logic Level - High3V
Voltage - Supply4.5V~35V
Operating Temperature-40℃~+125℃
Driven ConfigurationLow Side
Current - Output Low(IOL)2A
Rise Time7.5ns
Fall Time6.5ns
FeaturesInterleaved conduction protection
Current - Output High(IOH)2A
Load TypeMOSFET;IGBT

Introduction

AI Translation

Dual high-speed gate drivers are especially well suited for driving the latest MOSFETs and IGBTs. Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the family ideal for high-frequency and high-power applications.

Features

AI Translation
  • 2A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • -40°C to +125°C Extended Operating Temperature Range
  • Logic Input Withstands Negative Swing of up to 5V
  • Outputs May be Connected in Parallel for Higher Drive Current
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low 10μA Supply Current
  • Low Output Impedance

Applications

AI Translation
  • Efficient Power MOSFET and IGBT Switching
  • Switch Mode Power Supplies
  • Motor Controls
  • DC to DC Converters
  • Class-D Switching Amplifiers
  • Pulse Transformer Driver